Magnetic properties and magnetoresistance effect of SnFe2O4 spinel nanoparticles: Experimental,ab initio and Monte Carlo simulation

In this contribution, SnFe₂O₄ nanoparticles were prepared by the solvothermal method, the structural properties were performed using X-Ray Diffraction (DRX) to prove the success of tin ferrite formation and to determine de crystals parameters. The size and morphological study were build using Scanning Electron Microscopy (SEM) and Transmission Electron microscopy (TEM), the results showed that the size of particles is uniform with a range of particles (5–7 nm). The magnetic properties were carried out using the SQUID device, the SnFe2O4 nanoparticles have a magnetic transition at 750 K. In addition, the hysteresis loops at low temperature displayed Ms and Mr equals to 23 emu/g and 6 emu/g, respectively. The magnetoresistance properties were investigated, the SnFe₂O₄ nanoparticles present a large magnetoresistance effect (80%). The experimental results are supplemented by model calculations utilizing density functional theory and Monte-Carlo simulations.     

Hydrogen sulfide gas detection by Au-decorated ZnO nanotube: a computational study and comparison to experimental observations

Based on the experimental reports, Au-decoration on the ZnO nanostructures dramatically increases the electronic sensitivity to H₂S gas. In the current study, we computationally scrutinized the mechanism of Au-decoration on a ZnO nanotube (ZON) and the influence on its sensing behavior toward H₂S gas. The intrinsic ZON weakly interacted with the H₂S gas with an adsorption energy of ?11.2 kcal/mol. The interaction showed no effect on the HOMO–LUMO gap and conductivity of ZON. The predicted response of intrinsic ZON toward H₂S gas is 6.3, which increases to 78.1 by the Au-decoration at 298 K. The corresponding experimental values are about 5.0 and 80.0, indicating excellent agreement with our findings. We showed that the Au atom catalyzes the reaction 3O₂?+?2H₂S?→?2SO₂?+?2H₂O. Our calculated energy barrier (at 298 K) is about 12.3 kcal/mol for this reaction. The gap and electrical conductance Au-ZON largely changed by this reaction are attributed to the electron donation and back-donation processes. The obtained recovery time is about 1.35 ms for desorption of generated gases from the surface of the Au-ZON sensor.     

Advances in solid-state fiber batteries for wearable bioelectronics

Powering wearable bioelectronics with decent skin conformability and wearing comfort is highly desired. Fiber batteries could provide an attractive alternative to traditional rigid ones and present a compelling solution to this problem. In this review, we will discuss the various classes of fiber batteries, including lithium batteries, zinc batteries, and other types of fiber batteries. We will then report the latest research progress on each battery category through its working mechanism, materials usage, structure design, and wearable applications. Finally, we provide insights into current challenges and future applications of fiber batteries, aiming to promote the development of low-cost and high-performance fiber battery technologies for wearable bioelectronics.     

电子雷管技术的推广应用助力爆破器材安全管理工作

电子雷管技术提高了爆破器材的本质安全。通过对电子雷管技术发展历程的介绍,对其推广应用的可行性进行了深入分析,论述了电子雷管技术的推广应用对爆破器材安全管理工作的促进作用,并提出了今后推广应用中还需加强的工作。     

The investigation of the physical properties and hydrogenated mechanism of TM5Si4 (TM=Ti,Zr, Hf)

The outstanding physical properties make TM₅Si₄ silicides become the potential silicon-based transition-metal ultrahigh-temperature materials. In present work, we adopt the first-principles scheme to explore the structural stability, mechanical properties and explain the hydrogenated mechanism of Ti₅Si₄, Zr₅Si₄ and Hf₅Si₄ using the electronic structures. And the investigation increases the theoretical support for the developments and applications of TM₅Si₄ silicides. Three hydrogenated models have shown that the hydrogen displays the stability for hydrogenated TM₅Si₄ compounds. Furthermore, the introduction of hydrogen occupation has weakened the elastic properties of TM₅Si₄. The metallic property of TM₅Si₄ and three hydrogenated models was confirmed by the electronic structures. The localized hybridization between hydrogen and TM₅Si₄ confirm the hydrogenated structural stability.     

Theoretical prediction of structure,electronic and optical properties of VH2 hydrogen storage material

The vanadium hydrides have better hydrogen storage capacity in comparison to the other metal hydrides. Although the structure of VH₂ hydride has been reported, the structural stability, electronic and optical properties of VH₂ hydride are unclear. To solve these problems, we apply the first-principles method to study the structural stability, electronic and optical properties of VH₂ hydrides. Similar to the metal dihydrides, four possible VH₂ hydrides such as the cubic (Fm-3m), tetragonal (I4/mmm), tetragonal (P4₂/mnm) and orthorhombic (Pnma) are designed. The result shows that the cubic VH₂ hydride is a thermodynamic and dynamical stability. In particular, the tetragonal (I4/mmm) and the orthorhombic (Pnma) VH₂ hydrides are firstly predicted. It is found that these VH₂ hydrides show metallic behavior. The electronic interaction of V (d-state)-H (s-state) is beneficial to improve the hydrogen storage in VH₂ hydride. In addition, the formation of V–H bond can improve the structural stability of VH₂ hydride. Based on the analysis of optical properties, it is found that all VH₂ hydrides show the ultraviolet response. Compared to the tetragonal and orthorhombic VH₂ hydrides, the cubic VH₂ hydride has better storage optical properties. Therefore, we believe that the VH₂ hydride is a promising hydrogen storage material.     

Effect of Y concentration and film thickness on microstructure and electrical properties of HfO2 based thin films

In this work, we introduced a simple solution processing method to prepare yttrium (Y) doped hafnium oxide (HfO₂) based dielectric films. The films had high densities, low surface roughness, maximum permittivity of about 32, leakage current < 1.0 × 10^?7 A/cm² at 2 MV/cm, and breakdown field >5.0 MV/cm. In addition to dielectric performance, we investigated the influence of YO_1.5 fraction on the electronic structure between Y doped HfO₂ thin films and silicon (Si) substrates. The valence band electronic structure, energy gap and conduction band structure changed linearly with YO_1.5 fraction. Given this cost-effective deposition technique and excellent dielectric performance, solution-processed Y doped HfO₂ based thin films have the potential for insulator applications.     

英国食品GDAs标签的发展经验及对中国的启发

对英国食品每日摄入量指南（GDAs）标签开展案例研究，结果发现，GDAs标签从包装背面标签转为FOP标签，实施已有20年以上。该标签采用特定营养素体系度量法模型，显示每份食品能量、糖、脂肪、饱和脂肪、盐的含量及其每日参考摄入量占比，既没有颜色编码又没有形象的图标显示，且实施效果不如多数FOP标签。对此，中国可考虑将营养成分表信息以食品份量单位直观显示在包装正面，方便消费者关注与理解。     

2020年电子电路技术热点

文章归纳了2020年电子电路产业一些技术热点,主要有5G电路板设计和基材,制造方面半加成法、3D打印、直接金属化孔电镀和垂直互连结构等技术,以及集成电路封装载板技术。